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| AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Standard product AO3401A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (V GS = -10V) ID = -4.3A RDS(ON) < 46m (VGS = -10V) RDS(ON) < 55m (VGS = -4.5V) RDS(ON) < 80mW (V GS = -2.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A,F Current Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG Maximum -30 12 -4.3 -3.8 -25 1.4 0.9 -55 to 150 Units V V A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 65 85 43 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3401A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-4.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.6 -25 36 52 44 62 13 -0.75 -1 -2 933 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 108 81 6 9.3 VGS=-4.5V, VDS=-15V, ID=-4.3A 1.5 3.7 5.2 VGS=-10V, VDS=-15V, RL=3.5, RGEN=6 IF=-4.3A, dI/dt=100A/s 2 Min -30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 100 -1 -1.3 44 63 55 80 A nA V A m m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 1200 9 12.2 nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 6.8 42 15 21 14.3 28 Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The current rating is based on the t 10s thermal resistance rating. Rev0: Apr.2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 100 VGS=-2.5V Normalized On-Resistance 1.6 ID=-3.5A, VGS=-4.5V 1.4 ID=-4.3A, VGS=-10V VGS=-2.5V ID=-2.5A 1 -2.5V -ID(A) 10 -4.5V -3V 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics VDS=-5V -ID (A) 125C 25C VGS=-2V 80 RDS(ON) (m) 60 VGS=-4.5V 1.2 40 VGS=-10V 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 ID=-4.3A 70 60 50 40 30 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) www.aosmd.com AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 3 6 9 12 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-4.3A Capacitance (pF) 1200 Ciss 800 1600 400 Coss Crss 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10s 100s 1ms 10s 0.1 TJ(Max)=150C TC=25C 0.1 1 VDS (Volts) DC 10ms 0.1s Power (W) RDS(ON) limited 30 24 18 12 6 0 0.001 TJ(Max)=150C TA=25C 10.0 ID (Amps) 1.0 0.0 0.01 10 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 T Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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